| 摘要 |
A field effect transistor includes an undoped semiconductor layer formed on a semi-insulating InP substrate and lattice-matched with at least the semi-insulating InP substrate, a channel layer formed on the undoped semiconductor layer and consisting of a semiconductor layer having a larger electron affinity than that of the undoped semiconductor layer, a donor supply layer formed on the channel layer and consisting of an impurity-doped semiconductor layer having a smaller electron affinity than that of the channel layer, and a Schottky gate formation layer consisting of an undoped semiconductor layer formed on the donor supply layer. The donor supply layer consists of impurity-doped InP, and the Schottky gate formation layer consists of InAlAs.
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