| 摘要 |
PROBLEM TO BE SOLVED: To obtain a sputtering target small in the quantity of particles formed at the time of sputtering by forming the face to be subjected to sputtering in a sputtering target into a rugged face, executing mirror finishing and regulating the arithmetic average roughness to specified value or below. SOLUTION: A billet composed of a Ti material is subjected to prescribed heat treatment and forging treatment and is thereafter subjected to rolling treatment and machining to form into a disk-shaped sputtering target 1. The sputtering face 2 therein is subjected to machining into a rugged face having a prescribed curvature R, and furthermore, mirror finishing is executed to regulate the arithmetic average roughness Ra thereof to <=0.01μm. Moreover, the grain size of the sputtering target 1 is preferably regulated to <=20μm. In this way, the target 1 small in the quantity of particles to be generated in the process of sputtering is obtd., defects caused by particles can be reduced at the time of producing a semiconductor device or the like, and the improvement of the yield can be attained.
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