发明名称 |
Method of manufacturing a twin well semiconductor device with improved planarity |
摘要 |
A method for manufacturing semiconductor devices having a twin well structure in which the N-well and P-well regions of the substrate receive differential processing to set the final planarity of the semiconductor device. The differential processing permits the relative vertical position of the N-well and P-well surfaces to be controlled as needed to reduce the demands on subsequent processing steps. The relative vertical position of the N-well and P-well surfaces are preferentially set to improve the planarity of the semiconductor device during subsequent manufacturing processes, particularly photolithographic and metallization processes.
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申请公布号 |
US5766970(A) |
申请公布日期 |
1998.06.16 |
申请号 |
US19930022637 |
申请日期 |
1993.02.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YOUNG-PIL;CHUNG, TAE-YOUNG |
分类号 |
H01L21/8238;H01L21/8239;H01L21/8242;H01L27/092;H01L27/10;H01L27/108;(IPC1-7):H01L21/70;H01L27/00;H01L21/302;H01L21/76 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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