发明名称 FORMATION OF SEMICONDUCTOR THIN FILM AND APERTURE THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a method for formation of semiconductor thin films for formation of a large quantity of photoelectromotive elements which have high photoelectric conversion efficiency, having high quality and excellent uniformity, having higher reproducibility and have decreased defects over a large area on a continuously moving beltlike member and an apparatus therefor. SOLUTION: This method for formation of the semiconductor thin films consists in passing the belt-like member through plural film forming chambers connected by gas gates 306 having gas introducing ports 310 for introducing scavenging gases to slit-like separating passages while continuously moving the belt-like member in a longitudinal direction, successively laminating the semiconductor thin films on the belt-like member 307 in the respective film forming chambers and continuously taking up the belt-like member laminated with the semiconductor thin film in a taking-up stage. In such a case, at the time of taking-up the belt-like member in the taking-up stage, the taking-up is executed by controlling the temp. of the belt-like member; for example, a steering roller for guiding the belt-like member to the belt-like member taking-up means is made controllable in its temp.
申请公布号 JPH10158848(A) 申请公布日期 1998.06.16
申请号 JP19960338863 申请日期 1996.12.04
申请人 CANON INC 发明人 SANO HITOMI;FUJIOKA YASUSHI;KANAI MASAHIRO
分类号 C23C16/50;H01L21/205;H01L31/04 主分类号 C23C16/50
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