发明名称 |
Electron-beam lithography system and method for drawing nanometer-order pattern |
摘要 |
An electron-beam lithography system employing an "electron holography" technique is disclosed. The system at least comprises: a shaping aperture for shaping an electron beam emitted from an electron-beam source so as to have a specific beam shape; at least two single crystal thin films for diffracting the electron beam passed through this shaping aperture; focusing means for respectively focusing the incident electron beam passed through these single crystal thin films and the diffracted electron beams diffracted by these single crystal thin films; and a select aperture for selecting only the desired diffracted electron beams. The transmitted incident electron beam interferes with the diffracted electron beams, whereby a stripe pattern having a desired nanometer-order pitch is formed on a resist surface coated onto a semiconductor substrate or a mask blank.
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申请公布号 |
US5767521(A) |
申请公布日期 |
1998.06.16 |
申请号 |
US19950528409 |
申请日期 |
1995.09.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKENO, SHIRO;KANBAYASHI, SHIGERU;KOIKE, MITSUO;DOI, SEIZO;HIGASHIKAWA, IWAO |
分类号 |
G03F7/20;B82B1/00;H01J37/317;H01L21/027;(IPC1-7):H01J37/04 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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