发明名称 Semiconductor lead frame
摘要 A semiconductor lead frame having an improved structure formed of plated layers is provided. The semiconductor lead frame has the structure of multi-plated layers in which a Ni plated layer, a Pd strike plated layer, and a Pd-X alloy plated layer are deposited on a substrate in the described order. In such a multi-plated layer structure, the Pd strike plated layer covers the porous surface of the Ni plated layer and decreases the surface roughness. Since the thickness of the outer Pd-X alloy plated layer can be maintained uniform due to the Pd strike plated layer, corrosion durability and bonding characteristics are enhanced, thus minimizing the generation and progress of cracks.
申请公布号 US5767574(A) 申请公布日期 1998.06.16
申请号 US19970792211 申请日期 1997.01.31
申请人 SAMSUNG AEROSPACE INDUSTRIES, LTD. 发明人 KIM, JOONG-DO;BAEK, YOUNG-HO
分类号 H01L23/48;C23C28/02;C25D5/12;H01L23/495;H01L23/50;(IPC1-7):H01L23/495;B05D3/00;B05D3/12 主分类号 H01L23/48
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