| 摘要 |
PCT No. PCT/DE95/00353 Sec. 371 Date Dec. 18, 1996 Sec. 102(e) Date Dec. 18, 1996 PCT Filed Mar. 14, 1995 PCT Pub. No. WO95/26585 PCT Pub. Date Oct. 5, 1995Disclosed is a quantum layer structure, in particular, for lasers or detectors, having at least four semiconductor layers (S1, S2, S3, S4), with at least two internal layers (S2, S3) being disposed between two external barrier layers (S1, S4). The present invention is distinguished in that, without the application of an electric voltage, the lower edge of the conduction band of one the internal layers has an absolute minimum and the lower edge of the valence band of another internal layer has an absolute maximum, and that at least two internal layers having the absolute minimum and the absolute maximum possess quantized hole states respectively electron states.
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