| 摘要 |
PROBLEM TO BE SOLVED: To obtain a polishing compsn. which has a suitable selection ratio, has been improved in basic polishing properties, aging stability, etc., and can smooth an aluminum film by the CMP processing technique at a high polishing rate while hardly causing scratch and dishing by incorporating water, a dissolved iron (III) compd., and a polishing material selected from the group consisting of silicon dioxide, etc., into the same. SOLUTION: At least one compd. selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, silicon nitride, and zirconium oxide is used as the main polishing material. A polishing material polishes a surface by a mechanical action as an abrasive. The average particle size (by the BET method) of silicon dioxide is 0.005-0.5μm, and the average particle sizes (by the BET method) of aluminum oxide, silicon nitride, and zirconium oxide are each 0.01-10μm. The average particle size (with a scanning electron microscope) of cerium oxide is 0.01-10μm. The iron (III) compd. [e.g. ammonium iron (III) sulfate] is a polishing accelerator and is used in an amt. of 0.01-40wt.% of the total amt. |
