发明名称 |
Method of making a dielectric structure for facilitating overetching of metal without damage to inter-level dielectric |
摘要 |
Integrated circuit fabrication with a thin layer of oxynitride atop the interlevel dielectric, to provide an etch stop to withstand the overetch of the metal layer.
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申请公布号 |
US5766974(A) |
申请公布日期 |
1998.06.16 |
申请号 |
US19960659558 |
申请日期 |
1996.06.06 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
SARDELLA, JOHN C.;RICCO, BRUNO |
分类号 |
H01L21/3213;H01L21/768;H01L23/528;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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