发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device according to he present invention comprises a first conductivity-type semiconductor substrate in which a second conductivity-type well is formed, a memory cell array composed of a plurality of memory cells arranged in a matrix in the second conductivity-type well, and a substrate voltage control circuit selectively outputting an output voltage to the substrate according to an external input signal.
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申请公布号 |
US5768195(A) |
申请公布日期 |
1998.06.16 |
申请号 |
US19970857586 |
申请日期 |
1997.05.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAMURA, HIROSHI;MOMODOMI, MASAKI;IWATA, YOSHIHISA;KIRISAWA, RYOUHEI |
分类号 |
H01L21/66;G11C16/02;G11C16/04;G11C16/06;G11C16/30;G11C17/00;G11C29/00;G11C29/04;G11C29/34;H01L21/8247;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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