发明名称 |
Lower bandgap, lower resistivity, silicon carbide heteroepitaxial material, and method of making same |
摘要 |
A silicon carbide semiconductor material; and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 1200 DEG C. or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.
|
申请公布号 |
US5766343(A) |
申请公布日期 |
1998.06.16 |
申请号 |
US19950374473 |
申请日期 |
1995.01.17 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
DMITRIEV, VLADAMIR A.;IRVINE, KENNETH G.;SPENCER, MICHAEL;KELNER, GALINA |
分类号 |
C30B25/02;H01L21/04;(IPC1-7):C30B29/36 |
主分类号 |
C30B25/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|