Fail safe non-volatile memory programming system and method therefor

摘要

The present invention relates to a fail safe non-volatile memory programming system. The system uses a high voltage charging capacitor to store a charge for programming a memory device. A second charging capacitor is used for supplying power to the control logic used for programming the memory device. If power is removed during a programming cycle, the charge stored in the two capacitors is sufficient to complete the programming cycle.