发明名称 Variable stage charge pump
摘要 A variable stage charge pump for a flash memory device is described. The variable stage charge pump includes a first charge pump and a second charge pump. A first switch couples an output of the first charge pump to an input of the second charge pump. A second switch couples an input of the first charge pump to the input of the second charge pump. The first and second charge pumps are series-coupled to a common output node when the first switch is in a first position and the second switch is in a second position, wherein the first and second charge pumps are parallel-coupled to the common output node when the first switch is in the second position and the second switch is in the first position.
申请公布号 US5767735(A) 申请公布日期 1998.06.16
申请号 US19960720943 申请日期 1996.10.03
申请人 INTEL CORPORATION 发明人 JAVANIFARD, JAHANSHIR J.;TEDROW, KERRY D.;LIN, JIN-LIEN;EVERTT, JEFFREY J.;ATWOOD, GREGORY E.
分类号 G11C11/413;G11C5/14;G11C16/06;G11C16/30;H02M3/07;H02M3/28;(IPC1-7):G05F1/10 主分类号 G11C11/413
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