| 摘要 |
A solid-state imaging device includes a plurality of photodiodes for generating signal charge by photoelectric conversion in response to incident light. The photodiodes are formed on a substrate in either a one-dimensional arrangement or a two-dimensional arrangement; a charge transfer section is formed on the substrate for receiving the signal charge from the photodiodes and for transferring the signal charge toward an output portion; and a charge-accumulating region is formed on the substrate for receiving the signal charge from the output portion of the charge transfer section and for accumulating the signal charge. A reset circuit for resetting a state of the charge-accumulating region in response to a reset signal includes a first MOS transistor formed on the substrate, the first MOS transistor having a source connected to the charge-accumulating region, a drain supplied with a drain voltage for removing the signal charge, and a gate for connecting the source to the drain in response to the reset signal. Finally, a voltage generation circuit includes at least a second MOS transistor formed on the same substrate, the second MOS transistor serving as a first diode between the gate and the drain of the first MOS transistor. The voltage generation circuit generates a first forward voltage of the first diode in response to the reset signal, and applies the first forward voltage between the gate and the drain of the first MOS transistor.
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