| 发明名称 |
Thin-film transistor having a plurality of island-like regions |
| 摘要 |
A thin-film transistor comprising an active silicon pattern which is formed of a plurality of island-like regions arranged in parallel to each other, the island-like regions being formed of a polycrystal silicon thin film and each having a plane area of 1000 mu m2 or less.
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| 申请公布号 |
US5767529(A) |
申请公布日期 |
1998.06.16 |
| 申请号 |
US19960623506 |
申请日期 |
1996.03.28 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOBORI, ISAMU;ARAI, MICHIO |
| 分类号 |
H01L21/324;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/76;H01L29/04;H01L27/01 |
主分类号 |
H01L21/324 |
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