| 摘要 |
The diode detector architecture has two active layers of photoconductor (D1,D2) with an outer and inner contact layer (C1,C2). Command voltages (V1,V2) are applied to the top and bottom conduction layer. There is a common contact layer (Cc) between the two active layers which has a voltage applied between the command voltage levels. There is a current detector to measure the current difference between the two detector elements. |
