| 摘要 |
PURPOSE:To make it possible to perform an ashing on substrates to be treated uniformly and at high speed by a method wherein ashing gas is introduced in a treating chamber and the temperature of the substrates to be treated in the treating chamber is heated to a specified temperature to perform an ashing treatment. CONSTITUTION:Heaters 15a are controlled by a temperature control device 14 and semiconductor wafers 12 are heated to the extent of a temperature of 100 to 350 deg.C. Oxygen gas containing ozones, which are fed from an oxygen feed source 19 and an ozone generator 20, is controlled by a gas flow rate controller 18, is made to flow in a treating chamber 11 toward the substrates 12 through gas inflow and exhaust parts 17 and is exhausted by an exhaust device 21 so that a gas pressure in the chamber 11 is reduced to the extent of a pressure of 200 to 700Torr. At the same time, heaters 22, which are built-in the parts 17, are subjected to temperature control by a temperature control device 23 and the parts 17 are heated to the extent of a temperature of 20 to 300 deg.C, for example. Thereby, a high-speed ashing treatment becomes possible. |
