MOS transistor with number of source regions in active semiconductor region

摘要

The transistor has, located between each two adjacent source regions (112), drain regions (114), while between each source and drain region is a channel region with superimposed gate oxide regions (121), on which are provided gates (122), with gate coupling regions (124), outside the active semiconductor region (118), to each coupling region linked a gate contact (130). All gate contacts are metallically interconnected. Pref. numerous metal regions (132) are coupled to the gate contacts, while at least one through contact bung (134) is linked to each one metal region, with all bungs interconnected by a metal film (136). All gate contacts may be interconnected by a common line (210), superimposed on to the gate.