Kapazitiver Microsensor mit geringer Fremdkapazität und Herstellungsverfahren

摘要

The present invention relates to a capacitive microsensor comprising a sandwich of three silicon wafers (1, 2, 3), a peripheral band of the internal face of each external wafer being bonded to a corresponding band of the opposite face of the central wafer by means of an insulating band (5, 6). The insulating band is a band of silicon oxide which partially penetrates into the outer wafers.