| 摘要 |
<p>A process for stripping a positive organic photoresist from a substrate, which comprises prebaking the positive organic photoresist at a temperature in the range of from 150 to 220 DEG C for a period of time of from 15 minutes to 30 minutes, then contacting the positive organic photoresist with a liquid photoresist stripper for the positive organic photoresist for a time sufficient to remove the positive organic photoresist from the substrate.</p> |
