| 摘要 |
A device is formed in a semiconductor body having a major surface, with an insulating coating over the surface having an aperture exposing a portion thereof. A polycrystalline semiconductor layer is disposed in the aperture and over the coating, and a refractory metal layer overlies a portion of the semiconductor layer. A metal layer having low temperature properties overlies another portion of the semiconductor layer and is spaced from the refractory layer by a third portion of the semiconductor layer which provides metallurgical isolation and selective resistance between the two metal layers. Termination means contacts the low temperature layer.
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