发明名称 |
Thin film load structure |
摘要 |
A resistive load structure and method for making a resistive load structure for an integrated circuit includes the use of an amorphous silicon "antifuse" material. The resistive load structure can be used in an SRAM cell to provide a load to counteract charge leakage at the drains of two pull-down transistors and two pass transistors of the SRAM cell. The resistive load structure is advantageously formed by depositing an amorphous silicon pad over a conductive via, and the resistance of the resistive load structure is controlled by adjusting the thickness of the amorphous silicon pad and varying the diameter of the underlying conductive via.
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申请公布号 |
US5764563(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19960723007 |
申请日期 |
1996.09.30 |
申请人 |
VLSI TECHNOLOGY, INC. |
发明人 |
SUR, JR., HARLAN LEE;BOTHRA, SUBHAS |
分类号 |
G11C11/412;H01L21/02;H01L27/11;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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