| 摘要 |
PROBLEM TO BE SOLVED: To realize a low-resistance p type contact by eliminating a high resistance resulting from mutual diffusion at an interface with a substrate crystal, and also to reduce a leak current generated at the time of making an internal construction structure. SOLUTION: When a compound semiconductor layer having an irregularly slid formation is used as a contact layer 15 and predetermined elements are doped, a larger amount of doping can be realized than that when impurities are doped in an ordinary GaN system, a higher concentration of conductivity type can be realized, and a contact resistance can be reduced. Further, when a compound semiconductor layer having a shifted composition is used as a current blocking layer, a current blockage efficiency can be improved. Furthermore, in order to eliminate the roughness of a growth surface by a photo excited metal organic chemical vapor deposition (MOCVD) process, energy light slightly higher than a band gap of a growth crystal is illuminated, thus realizing a high carrier concentration of p type conductivity. |
