| 发明名称 |
Method for forming multilayer insulating film of semiconductor device |
| 摘要 |
For a multilayer insulating film of a semiconductor device, the distributed quantity of carbon or fluorine is maximized at the interface between insulating films. The concentration of carbon present at the interface is 1x1020 atoms/cm3 or more.
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| 申请公布号 |
US5763005(A) |
申请公布日期 |
1998.06.09 |
| 申请号 |
US19960589470 |
申请日期 |
1996.01.22 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
FURUMURA, YUJI;DOKI, MASAHIKO;NISHIO, HIDETOSHI |
| 分类号 |
H01L21/316;H01L21/3105;H01L21/768;H01L23/29;H01L23/522;H01L23/532;(IPC1-7):C23C16/00;H01L21/223 |
主分类号 |
H01L21/316 |
| 代理机构 |
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