发明名称 |
Semiconductor device having a Bi-CMOS transistor including an n-channel MOS transistor |
摘要 |
In a semiconductor device and a method of manufacturing the same according to the invention, a p-type diffusion region for electrically connecting a back gate region and an electrode layer together is formed at a source region. Thereby, both of source region and p-type diffusion region are electrically connected to the electrode layer, so that the source region and the back gate region are maintained at the same potential. As a result, it is possible to provide the semiconductor device and the method of manufacturing the same which can suppress operation of a parasitic bipolar transistor formed in the semiconductor device even if a gate electrode has a large width.
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申请公布号 |
US5763926(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19960742120 |
申请日期 |
1996.10.31 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YAMAMOTO, FUMITOSHI;TERASHIMA, TOMOHIDE |
分类号 |
H01L21/8234;H01L21/8238;H01L21/8249;H01L27/06;H01L27/088;H01L27/092;H01L29/10;H01L29/41;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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