发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To form a plug having the so-called pad without remarkably increasing the number of processes. SOLUTION: A first interlayer insulating film 15 which covers a conductive- layer pattern 14a formed on a substrate 11 is formed on the substrate 11. In the insulating film 15, a first connecting hole 16 is formed in the upper section of the film 15 above the pattern 14a, and a second connecting hole 17 having a diameter smaller than that of the first hole 16 is formed downward through the lower section of the film 15 from the bottom of the hole 16, so that the hole 17 can reach the pattern 14a. In addition, a conductive plug 18 is formed in such a state that the plug 18 fills up the holes 16 and 17, and the upper surface of the plug 18 is roughly flush with the surface of the insulating film 15.
申请公布号 JPH10154800(A) 申请公布日期 1998.06.09
申请号 JP19960311607 申请日期 1996.11.22
申请人 SONY CORP 发明人 KURODA HIDEAKI
分类号 H01L23/522;H01L21/768;H01L21/8242;H01L27/108 主分类号 H01L23/522
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