| 摘要 |
A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS( OMEGA ) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature T0(K). When two amounts alpha and beta are defined by: alpha =(Rt/T0)IthVth beta =(Rt/T0)RSIth2the point ( alpha , beta ) exists in an area on the alpha - beta plane surrounded by the straight line alpha =0, the straight line beta =0, and the curve ((21n t-1)/t, (1-ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.
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