| 摘要 |
A repair circuit of a semiconductor memory device is disclosed, including an address input unit for receiving and processing external addresses; a repair detecting unit for detecting whether there are addresses repaired on a programmed data basis; a normal decoding unit for selecting normal word lines; a redundant decoding unit for selecting redundant word lines; a repair address determining unit, enabled by a signal produced from the repair detecting unit, for comparing the external addresses with repair addresses programmed therein; a normal decoder control unit for controlling a turned-on or turned-off state of the normal decoding unit by receiving the external addresses, the signal produced from the repair detecting unit, and a repair signal produced from the repair address determining unit; an address delay unit for controlling delays of the external addresses, based on the output signals of the repair detecting unit; and a sense amplifier control unit driven by an output signal from the address delay unit.
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