| 摘要 |
A method for making a semiconductor device, includes steps of: forming a lower wiring on a semiconductor substrate; forming layer insulation film to cover the lower wiring; coating a surface of the layer insulation film with organic or inorganic SOG to form SOG film; heat-treating the SOG film; etching the SOG film to even a surface of the SOG film; forming an aperture reaching through the SOG film and the layer insulation film to the lower wiring; and filling the aperture with a conductive material to form a through-hole, wherein the coating step with the organic or inorganic SOG is conducted in amine system gas atmosphere.
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