发明名称 |
Fabrication method of semiconductor laser by MOVPE |
摘要 |
A fabrication method of a semiconductor QW laser by MOVPE with a high fabrication yield, providing a laser device sufficiently reliable in operation over long period of time and applicable for optical communications. An InGaAs QW active layer is grown on a first semiconductor layer formed on or over a semiconductor substrate at a growth temperature ranging from 580 DEG to 640 DEG C. Then, a second semiconductor layer is grown on the active layer at the same growth temperature as that of the active layer. Preferably, the active layer is grown under a condition that the total pressure in a growth chamber is substantially equal to an atmospheric pressure and a partial pressure of arsine (AsH3) for As component ranges from 1.6x10-7 to 3x10-1 Torr.
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申请公布号 |
US5762705(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19940282457 |
申请日期 |
1994.07.29 |
申请人 |
NEC CORPORATION |
发明人 |
FUKAGAI, KAZUO;ISHIKAWA, SHIN |
分类号 |
H01L21/205;C30B25/02;H01S5/00;H01S5/343;(IPC1-7):C30B25/02 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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