发明名称 |
ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up |
摘要 |
The preferred embodiment of the present invention overcomes the limitations of the prior art and provides a device and method to decrease the latch-up susceptibility of an ESD structure by suppressing the injection of minority carriers that cause transistor action to occur. This is accomplished, for example, by using a metal contact to the n-substrate or n-well in place of or in parallel with the prior art p-diffusion. Using such a metal contact forms a Schottky Barrier Diode (SBD) with the ESD structure. Since the SBD is a majority-carrier device, negligible minority carriers are injected when the SBD is in forward bias, thereby reducing the likelihood of latch-up.
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申请公布号 |
US5763918(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19960740134 |
申请日期 |
1996.10.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP.;TOKYO SHIBAURA ELECTRIC CO |
发明人 |
EL-KAREH, BADIH;RYAN, JAMES GARDNER;TANIMOTO, HIROYOSHI |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/092;H01L29/47;H01L29/872;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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