发明名称 |
Integrated arc and polysilicon etching process |
摘要 |
A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.
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申请公布号 |
US5763327(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19950554413 |
申请日期 |
1995.11.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BLASINGAME, TOM;GUPTA, SUBASH;BELL, SCOTT A. |
分类号 |
H01L21/027;H01L21/311;H01L21/3213;(IPC1-7):B44C1/22 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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