| 摘要 |
<p>PROBLEM TO BE SOLVED: To decrease the number of times of mask matching and to improve the withstand voltage between multilayer wiring using the insulator, which is formed by oxidizing the lower wiring layer, as the whole or a part of an interlayer insulator. SOLUTION: A silicon oxide film 102 is formed on a substrate 101, and after a semiconductor film has been formed thereon, an insulating film, to be used as a semiconductor region 103 and a gate insulating film 104, is formed by etching the above-mentioned semiconductor film. Then, a metal film, which is mainly composed of aluminum, is formed, and a gate electrode 106, a gate wiring 105 and a storage capacity wiring 107 are formed by selectively removing the above-mentioned metal film. After formation of an impurity region 108, an anodic oxidation operation is conducted, and an oxide film 109 is formed on the surface of a gate wiring, a gate electrode and a storage capacity electrode. Then, a metal film is formed, and a drain wiring/electrode 110 and a source electrode 111 are formed by patterning the metal film. Consequently, as the upper wiring can be formed directly, a sheet of mask can be reduced.</p> |
