发明名称 |
Method of fabricating microelectronic capacitors having tantalum pentoxide dielectrics and oxygen barriers |
摘要 |
A microelectronic capacitor is formed by nitrating the surface of a conducting electrode on a microelectronic substrate. The nitrated surface of the conductive electrode is then oxidized. The nitrating and oxidizing steps collectively form a film of silicon oxynitride on the conductive electrode. A tantalum pentoxide film is then formed on the oxidized and nitrated surface of the conductive electrode. The tantalum pentoxide film may then be thermally treated in the presence of oxygen gas. High performance microelectronic capacitors are thereby provided.
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申请公布号 |
US5763300(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19960709249 |
申请日期 |
1996.09.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, IN-SUNG;KIM, KYUNG-HOON |
分类号 |
H01L27/04;H01L21/02;H01L21/31;H01L21/316;H01L21/318;H01L21/822;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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