| 摘要 |
A semiconductor device comprising at least one SiC semiconductor layer; and passivation layers applied on at least a portion of a surface of the SiC semiconductor layer for passivation thereof; the passivation layers comprising at least a substantially insulating layer comprising crystalline AlN and placed next to the SiC semiconductor layer and a semi-insulating layer allowing a weak current to flow therein in a blocking state of the device; wherein the semi-insulating layer comprises at least one first sub-layer and at least one second sub-layer, the at least one first sub-layer having a smaller gap between a conduction band and a valence band thereof than the at least one second sub-layer and the at least one second sub-layer having dopants for auto-ionization thereof by transport of charge carriers thereof to a deeper energy state in the semi-insulating sub-layer.
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