| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid semiconductor device having such an inductor that can be insulated completely from a substrate. SOLUTION: In a semiconductor device having an inductor, the inductor 25 is formed on a non-oxidized porous silicon area 15 formed in a silicon substrate 10. The porous silicon area 15 reduces the capacitive coupling and inductive coupling between the inductor 25 and the substrate 10. It is preferable to form the silicon area 15 by using such an electrolysis process that connects the silicon substrate 10 to be exposed to an electrolytic solution to an anode. |
