| 摘要 |
PROBLEM TO BE SOLVED: To make a semiconductor fine and highly integrated by making a wiring member thin. SOLUTION: A Ti film 2, TiN film 3, Al alloy film 4, Ti film 5, and TiN film 6 are piled up in order on a silicon substrate 1, and boron ions are implanted to the entire surface of a device through an ion implantation method. Thus, a TiB2 compound phase is formed in the Ti film 5 and the wiring resistance is lowered. Therefore, the Ti film 5 can be made thinner, resulting in thinner wiring member entirely. |
