发明名称 |
Boron doping a semiconductor particle |
摘要 |
A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.
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申请公布号 |
US5763320(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19950570070 |
申请日期 |
1995.12.11 |
申请人 |
STEVENS, GARY DON;REYNOLDS, JEFFREY SCOTT;BROWN, LOUANNE KAY |
发明人 |
STEVENS, GARY DON;REYNOLDS, JEFFREY SCOTT;BROWN, LOUANNE KAY |
分类号 |
H01L31/0288;H01L31/0352;H01L31/18;(IPC1-7):H01L21/22 |
主分类号 |
H01L31/0288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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