| 摘要 |
PROBLEM TO BE SOLVED: To obtain a graphite having extremely high degree of crystallinity by containing silicon or its compounds and boron or its compounds simultaneously as main components in carbon or carbon precursors and then heat processing. SOLUTION: In this process the silicon or its compound, practically SiC, and boron or its compound, practically B4 C are added to carbon or carbon precursors simultaneously and heat processed. Both α-SiC and β-SiC may be used as SiC. Other silicon compound may be used instead of SiC and other boron compounds may be used instead of B4 C because almost all silicon compounds change into SiC when contacted with carbon at a high temperature, and almost all boron compounds change into B4 C. This graphite is obtained, for example, SiC B4 C is added to raw coke, triturated for 20 hours by a triturator, then molded at 200Mpa, baked at 1200 deg.C for 30min in an inert atmosphere, then in a high purity argon atmosphere heat processed at 2600-3000 deg.C for 6 hours. |
