PRODUCTION OF SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal by a CZ method by which a density of octahedral void faults being in as-grown silicon single crystal is decreased and further an wafer having an oxidation membrane excellent in compression-resistant characteristics is obtained. SOLUTION: A crystal is grown by regulating a pulling up rate V(mm/min) of the crystal, temperature inclinations G1( deg.C/mm) and G2( deg.C/mm) in the crystalline axis direction within the temperature regions between the melting point of the silicon and 1300 deg.C and between 1150 deg.C and 1080 deg.C respectively, and the density (d) (1/cm<2> ) of faults so as to satisfy the formulas V/G1>0.581×V×G 2-(d-4.3×10<3> )/2.65×10<6> and V/G1>0.25 in the method for producing a silicon single crystal. Thereby, the silicon single crystal having a density of the faults reduced to <1×10<6> /cm<3> and excellent in compression-resistant characteristics of an oxide membrane and yield of devices is produced.