| 摘要 |
PROBLEM TO BE SOLVED: To solve problems concerning the pad of a semiconductor device, such as connection failure due to breakage of pad metal, inferior adhesion on contact boundary between a metallic material and peripheral oxide film, floating of pads together with the connected wire, etc. SOLUTION: A semiconductor device is formed by piling up a plurality of films on a silicon substrate 23, and it contains an insulation film 30 on the uppermost layer which is connected electrically with an external circuit through a pad 31 formed on the uppermost part thereof. Continuous insulation films 27 and 30 formed of at least one or more layers which are underneath the pad 31 are continuously displaced with pad contacts 26 and 29 made partly of conductive material for wiring. Then, the structure of pad is made in such a manner that the pad 31 may be in electric continuity with the pad contacts 26 and 29.
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