发明名称 Cathode mounting for ion source with indirectly heated cathode
摘要 An ion source is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber.
申请公布号 US5763890(A) 申请公布日期 1998.06.09
申请号 US19960740478 申请日期 1996.10.30
申请人 EATON CORPORATION 发明人 CLOUTIER, RICHARD M.;HORSKY, THOMAS N.;REYNOLDS, WILLIAM E.
分类号 C23C14/48;H01J27/08;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):H01J37/08 主分类号 C23C14/48
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