发明名称 |
Cathode mounting for ion source with indirectly heated cathode |
摘要 |
An ion source is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber.
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申请公布号 |
US5763890(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19960740478 |
申请日期 |
1996.10.30 |
申请人 |
EATON CORPORATION |
发明人 |
CLOUTIER, RICHARD M.;HORSKY, THOMAS N.;REYNOLDS, WILLIAM E. |
分类号 |
C23C14/48;H01J27/08;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):H01J37/08 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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