发明名称 |
Isolation regions and methods of forming isolation regions |
摘要 |
A silicon-comprising layer is employed adjacent a trench during planarization of an oxide fill within the trench. An overhanging oxide sidewall is formed along a lateral edge of a trenched isolation region, the overhanging oxide sidewall overlapping an upper surface of a substrate immediately adjacent the trenched isolation region. An oxide plug is formed comprising a recessed portion below a substrate upper surface and an elevated portion above the substrate upper surface. The elevated portion comprising a ledge which extends over the substrate upper surface and has a top surface and a substantially vertical lateral edge side surface. Further, the plug may be within a substrate, the oxide plug having a recessed portion below a substrate upper surface and an elevated portion above the substrate upper surface, the elevated portion comprising a ledge extending over the substrate upper surface and abutting a polysilicon layer.
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申请公布号 |
US5763932(A) |
申请公布日期 |
1998.06.09 |
申请号 |
US19970820711 |
申请日期 |
1997.03.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
PAN, PAI-HUNG;ROBINSON, KARL M. |
分类号 |
H01L21/762;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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