发明名称 PRODUCTION OF ELECTRODE PLATE FOR PLASMA ETCHING AND ELECTRODE PLATE FOR PLASMA ETCHING
摘要 PROBLEM TO BE SOLVED: To reduce foreign materials dropped onto a wafer surface and sticking thereto at the time of etching such as carbon grains and provide an electrode plate usable for a long period by forming a small through-hole in a resin molding product having a Shore hardness within a specific range, then carrying out the carbonization and high-temperature treatment in a nonoxoidizing atmosphere and regulating the pore diameter in a glassy carbon to a specified value or below. SOLUTION: A resin molding product having 60-110, preferably 70-100 Shore hardness is used and the pore diameter in a glassy carbon is regulated to <=100&mu;m. When the Shore hardness is <60, a deteriorated layer is produced with the frictional heat of a drill when forming a small through-hole and selectively damaged with a plasma at the time of etching to cause the dropping of carbon grains, etc. When the Shore hardness exceeds 110, the drill is severely damaged and, e.g. a machined surface is plucked off to cause flaws. The damaged surface is selectively damaged with the plasma. A furan resin, a phenol resin, an unsaturated polyester resin, etc., are used as the starting raw material for obtaining the resin molding.
申请公布号 JPH10152375(A) 申请公布日期 1998.06.09
申请号 JP19960306446 申请日期 1996.11.18
申请人 HITACHI CHEM CO LTD 发明人 OTA KOJIRO;KAMATA MITSUJI;KOKAJI KAZUMI;SUZUKI TAKAYUKI
分类号 C04B35/52;C01B31/02;C23F4/00;H01L21/302;H01L21/3065 主分类号 C04B35/52
代理机构 代理人
主权项
地址