| 摘要 |
Improved power MOSFET structure, and fabrication process are disclosed in this invention to achieve cost savings by simplified device structure and fabrication processes, and also by reducing the required die size. Specifically, in a novel MOSFET device, insulation of mobile ions are achieved by extending the poly gate and metal contacts such that the passivation layer is no longer required and the fabrication process is simplified such that the MOSFET device can be manufactured at a lower price. Furthermore, in another MOSFET device, the gate runner is used to replace the field plate such that the requirement of a field plate as that in a conventional MOSFET device is also eliminated and, by reducing the die size, the cost of manufacture is further reduced.
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