发明名称 Synchronous semiconductor memory device which allows switching of bit configuration
摘要 A synchronous DRAM includes a selector which supplies 2 bits of serial data signals from one data input/output terminal to two input/output line pairs as parallel data signals in x8 configuration mode, and supplies 2 bits of parallel data signals from both data input/output terminals directly to two input/output line pairs in x16 configuration mode. Therefore, the synchronous DRAM allows switching of bit configuration, and it takes 2-bits prefetch configuration in x8 configuration mode, and signal pipeline configuration in x16 configuration mode.
申请公布号 US5764590(A) 申请公布日期 1998.06.09
申请号 US19960735149 申请日期 1996.10.22
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 IWAMOTO, HISASHI;KONISHI, YASUHIRO
分类号 G11C11/407;G11C7/10;G11C11/401;G11C11/408;(IPC1-7):G11C8/00 主分类号 G11C11/407
代理机构 代理人
主权项
地址