| 摘要 |
A semi-conductor device comprises an n-type substrate carrying a base electrode, and two diffused-in regions of p-type material which respectively carry an emitter electrode and a collector electrode. The construction is in the form of a lateral transistor and the collector electrode is preferably arranged to be relatively remote from the emitter electrode so as to give a very low collector current gain. Under these conditions, the emitter-base voltage of the device is dependent on the natural logarithm of the input current to the collector electrode over a wide range. An amplifier keeps the collector-base voltage low compared with the emitter-base voltage.
|
