| 摘要 |
<p>An electrically erasable and programmable read only memory (EEPROM) includes an array of trench memory cells (10), with each memory cell having a semiconductor drain region (18) adjacent a surface-adjoining portion of the trench. The EEPROM is provided with at least two overlapping metallization layers (30a, 30b) overlying the memory cells and separated from each other and from the trenches and the drain regions by regions of insulating material. The overlapping metallization layers contact the drain regions of the underlying memory cells through the insulating material. This configuration results in a memory array having a very high packing density.</p> |
