发明名称 |
ACTIVE MATRIX LIQUID CRYSTAL DISPLAY |
摘要 |
A thin film transistor used as a switching element of an active matrix liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film (13) formed over a scanning electrode (12), an insulating layer (14) formed over the silicon nitride film (13), and a semiconductor layer having a source region (17) and a drain region (18) formed over the insulating layer (14). The thin film transistor has a threshold voltage higher than the maximum of the liquid crystal operating voltage. The insulating layer (14) is a silicon oxide film having a thickness of 30 angstroms or more.
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申请公布号 |
WO9823995(A1) |
申请公布日期 |
1998.06.04 |
申请号 |
WO1996JP03467 |
申请日期 |
1996.11.27 |
申请人 |
HITACHI, LTD.;ANDO, MASAHIKO;WAKAGI, MASATOSHI;FUKAYA, RITSUO |
发明人 |
ANDO, MASAHIKO;WAKAGI, MASATOSHI;FUKAYA, RITSUO |
分类号 |
G02F1/1333;A01N25/02;A01N33/12;C11D3/48;G02F1/133;G02F1/1343;G02F1/1368;H01L21/28;H01L21/336;H01L29/51;H01L29/786;(IPC1-7):G02F1/133;G02F1/134 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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