发明名称 ACTIVE MATRIX LIQUID CRYSTAL DISPLAY
摘要 A thin film transistor used as a switching element of an active matrix liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film (13) formed over a scanning electrode (12), an insulating layer (14) formed over the silicon nitride film (13), and a semiconductor layer having a source region (17) and a drain region (18) formed over the insulating layer (14). The thin film transistor has a threshold voltage higher than the maximum of the liquid crystal operating voltage. The insulating layer (14) is a silicon oxide film having a thickness of 30 angstroms or more.
申请公布号 WO9823995(A1) 申请公布日期 1998.06.04
申请号 WO1996JP03467 申请日期 1996.11.27
申请人 HITACHI, LTD.;ANDO, MASAHIKO;WAKAGI, MASATOSHI;FUKAYA, RITSUO 发明人 ANDO, MASAHIKO;WAKAGI, MASATOSHI;FUKAYA, RITSUO
分类号 G02F1/1333;A01N25/02;A01N33/12;C11D3/48;G02F1/133;G02F1/1343;G02F1/1368;H01L21/28;H01L21/336;H01L29/51;H01L29/786;(IPC1-7):G02F1/133;G02F1/134 主分类号 G02F1/1333
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