| 摘要 |
PCT No. PCT/AU95/00829 Sec. 371 Date May 29, 1997 Sec. 102(e) Date May 29, 1997 PCT Filed Dec. 8, 1995 PCT Pub. No. WO96/18213 PCT Pub. Date Jun. 13, 1996A multilayer solar cell with bypass diodes includes a stack of alternating p and n type semiconductor layers 10, 11, 12, 13, 14 arranged to form a plurality of rectifying photovoltaic junctions 15, 16, 17, 18. Contact is made to underlying layers by way of a buried contact structure comprising grooves extending down through all of the active layers, the walls of each groove being doped 33, 34 with n-or p-type impurities depending upon the layers to which the respective contact is to be connected and the grooves being filled with metal contact material 31, 32. One or more bypass diodes are provided by increasing the doping levels on either side 10, 13 of one or more portions of the junctions 16 of the cell such that quantum mechanical tunnelling provides a reverse bias characteristic whereby conduction occurs under predetermined reverse bias conditions. Ideally, the doping levels in the bypass diodes is 1018 atoms/cm3 or greater and the junction area is small. |
